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| Ordering number : EISB*0001A Ultrathin Miniature Package SR10000 Series Overview 1-channel Step-up DC/DC Converter ICs The SR10000 Series is a SANYO's original SIP (System In Package) that includes a DC/DC converter control IC, a power MOSFET and a Schottky barrier diode. All these components are mounted into one thin-and-small package by utilizing SANYO's high-density mounting technology, "Integrated System in Board (ISB)". The advantage using this DC/DC converter package is that it greatly decreases its mounting area and space, compared with when the same circuit is set up with the discrete devices. In addition to that, it is very easy to assemble step-up switching power supply with by just adding voltage-setting resistance, inductor and capacitors. Functions and Features * Since the SR10000 Series packages a voltage step-up DC/DC converter IC as well as power MOSFET and Schottky barrier diode devices in the same package with the minimum trace length between components, it can provides high efficiency and superior characteristics including low output ripple. In particular the mounting area required by these components is reduced when compared to implementations using discrete devices. * The output voltage is set using an external resistor. * Standby function: Standby mode current=1A (maximum) * Automatic PWM/PFM switching control (SR10020, SR10040, SR10050) * External PWM/PFM switching control (SR10030, SR10060, SR10070) * Oscillator frequency: 100kHz (SR10060), 180kHz (SR10030), 300kHz (SR10020, SR10070), 500kHz (SR10040, SR10050) (accuracy15%) * The values given in this data sheet for models SR10060 is tentative and subject to change before putting into mass production. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. N2206 / 41006HKIM No.0001-1/8 SR10000 Series Comparison of Functions Type No. Control System SR10020 SR10030 SR10040 SR10050 SR10060 SR10070 Automatic PWM/PFM switching control External PWM/PFM switching control Automatic PWM/PFM switching control Automatic PWM/PFM switching control External PWM/PFM switching control External PWM/PFM switching control DC/DC Controller IC Input Voltage Range 0.9V to 10V 0.9V to 10V 0.9V to 10V 0.9V to 10V 0.9V to 10V 0.9V to 10V Oscillator Frequency 300kHz 180kHz 500kHz 500kHz 100kHz 300kHz TR Maximum Rating VDSS 30V 30V 30V 30V 20V 20V ID 2.5A 2.5A 2.5A 2.5A 3A 3A Di Maximum Rating VRRM 30V 30V 30V 15V 30V 15V IO 1A 1A 1A 2A 1A 2A 1.5V to 20V 1.5V to 20V 1.5V to 20V 1.5V to 10V 1.5V to 13V 1.5V to 10V Output Setting *1 *1: The output setting maximum values are voltages that are 1/1.5 times the VDSS and VRRM as a general rule of thumb, and they are provided to serve as a reference only. As such, it must be verified during actual operation that they do not exceed the rated voltages. Package Dimensions unit : mm 3.4 0.75 3.4 MIN 0.6 1.7 1 2 3 0.1 0.65 0.4 A 4 5 1.7 B C D 0.4 0.65 E 0.4 0.65 1.7 1.7 0.35 0.65 0.4 No.0001-2/8 SR10000 Series Pin Layout and Internal Equivalent Circuit Block Diagram 1 A B C D E 2 3 4 5 1D, 1E 2D, 2E, 3E 3D Di 4D, 4E, 5D, 5E TR EXT IC GND VDD FB 2A, 2B, 2C, 3A, 3B 3C, 4A, 4B, 4C, 5B 5C CE Bottom view 1B, 1C 5A 1A Specifications Absolute Maximum Ratings at Ta = 25C Device IC Parameter VDD pin voltage FB pin voltage CE pin voltage EXT pin voltage EXT pin current TR Drain-to-source voltage 1 Gate-to-source voltage 1 Drain current 1 Drain-to-source voltage 2 Gate-to-source voltage 2 Drain current 2 Allowable power dissipation Di Reverse voltage 1 Output current 1 Reverse voltage 2 Output current 2 Allowable power dissipation Operating temperature Storage temperature Symbol VDD VFB VCE VEXT IEXT VDSS1 VGSS1 ID1 VDSS2 VGSS2 ID2 PD-T VRRM1 I O1 VRRM2 I O2 PD-D Topr Tstg 60mmx60mmx1.6mm3 FR4 board SR10050, SR10070 60mmx60mmx1.6mm3 FR4 board SR10020, SR10030, SR10040, SR10060 SR10060, SR10070 SR10020, SR10030, SR10040, SR10050 Conditions Ratings -0.3 to +12 -0.3 to +12 -0.3 to +12 -0.3 to VDD+0.3 Unit V V V V mA V V A V V A mW V A V A mW 100 30 12 2.5 20 10 3 700 30 1 15 2 750 -30 to +85 -40 to +125 C C No.0001-3/8 SR10000 Series Electrical Characteristics Overall Operating Characteristics at Ta = 25C, in the specified test circuit Parameter Output voltage Output voltage setting range FB control voltage Supply voltage Operation start voltage Current dissipation Symbol VOUT VOSET VFB VDD VST IDD *3 IO=1mA VIN=2V, IO=0mA SR10060 VIN=2V, IO=0mA SR10030 VIN=2V, IO=0mA SR10020, SR10070 VIN=2V, IO=0mA SR10040, SR10050 Standby current Oscillator frequency ISTB FOSC VIN=2V, VCE=0V VIN=2V, IO=10mA SR10060 VIN=2V, IO=10mA SR10030 VIN=2V, IO=10mA SR10020, SR10070 VIN=2V, IO=10mA SR10040, SR10050 Efficiency CE high voltage CE low voltage PWM high voltage PWM low voltage CE high current CE low current EFFI VCEH VCEL VPWMH VPWML ICEH ICEL SR10030, SR10060, SR10070 *4 SR10030, SR10060, SR10070 *4 CE=VDD=3.3V CE=0V VDD-0.2 VDD-1.0 0.1 0.1 0.65 0.20 85 153 255 425 100 180 300 500 85 29 45 62 97 1.8 Conditions min VIN=2V, IO=10mA VIN=VOSETx0.6, VDD=3.3V, IOUT=10mA 3.217 1.5 0.9 10 0.9 41 64 88 137 1 115 207 345 575 Ratings typ 3.300 max 3.383 *2 V V V V V Unit A A A A A kHz kHz kHz kHz % V V V V A A *2: The output setting maximum voltages are within 1/1.5 times the VDSS of the built-in MOSFET and within 1/1.5 times the VRRM of the Di as a general rule of thumb. As such, it must be verified during actual operation that they do not exceed the rated voltages. *3: VDD should be 1.8V or higher when VIN or other power source is supplying VDD since the output voltage and oscillating frequency become steady when VDD is set 1.8V or higher, although the built-in IC starts step-up voltage operation from VDD=0.8V. *4: For models SR10030, SR10060, and SR10070, the CE pin also serves to implement a PWM/PFM external switching function. When the voltage is VDD-0.2V or more, PWM control is exercised, and when it is VCEH or more but VDD-1.0V or less, PWM/PFM automatic switching at a duty ratio of 25% is controlled. Di Characteristics at Ta = 25C, in the specified test circuit Parameter Forward voltage 1 Reverse current 1 Forward voltage 2 Reverse current 2 Symbol VF1 IR1 VF2 IR2 Conditions SR10020, SR10030 SR10040, SR10060 SR10050, SR10070 IF=1A VR=30V IF=1A VR=6V min typ 0.43 40 0.30 max 0.47 200 0.35 600 unit V A V A Pin Functions Pin No. 1A 1B, 1C 1D, 1E, 2D, 2E, 3E 2A, 2B, 2C, 3A, 3B, 3C 4A, 4B, 4C,5B 3D 4D, 4E, 5D, 5E 5A 5C IC EXT, TR Gate Di Cathode IC CE IC FB Gate for TR Cathode of Diode and VOUT Operation starts when chip enable pin is set to "high". This pin also serves as a PWM/PFM selector for models SR10030, SR10060, and SR10070. External resistance connecting pin for output voltage setting, internal control voltage: 0.9V typical GND TR Source TR Drain, Di Anode IC VDD Pin Name Ground pin for IC. Source pin for TR Drain of TR and Anode of Diode Supply voltage for IC Description No.0001-4/8 SR10000 Series Equivalent Circuit and Test Peripheral Circuitry VIN L 22H SR10000 Series IIN A TR VIN CIN 10F CE EXT IC GND FB RFB2 45k VCE VDD CFB 68pF RFB1 120k Co 10F V Di RSENSE 100m VOUT FOSC Selection rules of external components 1) RFB: Set the ratio of RFB1 and RFB2 to be RFB1+RFB22M and VFB=0.9V. 2) CFB: Set fzfb=1/(2xxCFBxRFB1) to be within 5kHz to 30kHz. 3) L, Co, RSENSE: When ceramic capacitor is used for Co: L=10H, Co=10F (SR10020, SR10040, SR10050, SR10070) L=22H, Co=10F (SR10030, SR10060) RSENSE=50m (SR10060), 100m (other than SR10060) When tantalum capacitor is used for Co: L=10H, Co=47F (SR10040, SR10050) L=22H, Co=47F (SR10020, SR10070) L=47H, Co=47F (SR10030, SR10060) RSENSE=None (shorted) When electrolytic capacitor is used for Co: L=22H, Co=100F//2.2F ceramic (SR10020, SR10070) L=47H, Co=100F//2.2F ceramic (SR10030, SR10060) RSENSE=None (shorted) These constants of the components above should be changed if necessary for larger step-up ratio VOUT/VIN and larger output current IOUT using the expression shown below as a reference. Co=(Standard Co*) x (IOUT (mA) / 300mA x VOUT/VIN) * Standard Co: values shown above No.0001-5/8 SR10000 Series 3.4 VO - IO 2.9VOUT [Conditions] *Ta=25C*VIN=VCE*VDD=VOUT *L=10H*CIN=22F//0.1F *COUT=22F *RFB1 : RFB2=330k : 150k *CFB=22pF V IN = 1.5 V V 1 .2 100 EFFI - IO 2.9VOUT 3.2 VIN=1.5V 80 Output Voltage, VO - V Efficiency, EFFI - % 3.0 1.2V 60 0.9V 2.8 0.8V 0.9V 2.6 40 2.4 20 2.2 2.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 [Conditions] *Ta=25C*VIN=VCE*VDD=VOUT *L=10H*CIN=22F//0.1F *COUT=22F *RFB1 : RFB2=330k : 150k *CFB=22pF 23 5 7 1.0 23 5 7 10 23 5 7 100 23 Output Current, IO - A 1.7 ISB00001 100 VO - IO Output Current, IO - mA 5 71000 ISB00002 EFFI - IO 1.5VOUT 1.6 Output Voltage, VO - V Efficiency, EFFI - % 1.5 [Conditions] *Ta=25C*VIN=VCE*VDD=2.9V *L=10H*CIN=22F//0.1F *COUT=22F *RFB1 : RFB2=220k : 330k *CFB=39pF VIN =1.5 V 1.2 V V 0.9 1.5VOUT 80 VIN=1.5V 0.9V 1.2V 60 1.4 40 1.3 20 1.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 [Conditions] *Ta=25C*VIN=VCE*VDD=2.9V *L=10H*CIN=22F//0.1F *COUT=22F *RFB1 : RFB2=220k : 330k *CFB=39pF 23 5 7 1.0 23 5 7 10 23 5 7 100 23 Output Current, IO - A 18 ISB00003 100 VO - IO Output Current, IO - mA 5 71000 ISB00004 EFFI - IO 15VOUT 17 Output Voltage, VO - V 16 Efficiency, EFFI - % [Conditions] *Ta=25C*VIN=VDD=2.9V *L=10H*CIN=10F *COUT=10F *RFB1 : RFB2=470k : 30k *CFB=22pF 15VOUT 80 60 15 40 14 13 20 12 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0 0.1 [Conditions] *Ta=25C*VIN=VDD=2.9V *L=10H, CIN=10F *COUT=10F *RFB1 : RFB2=470k : 30k *CFB=22pF 23 5 7 1.0 23 5 7 10 23 5 7 100 23 Output Current, IO - A ISB00005 Output Current, IO - mA 5 71000 ISB00006 No.0001-6/8 SR10000 Series 3.4 VO - IO 2.9VOUT [Conditions] *Ta=25C*VDD=VOUT*L=10H *CIN=22F//0.1F*COUT=10F *RFB1 : RFB2=330k : 150k *CFB=22pF 100 EFFI - IO 2.9VOUT 3.2 VIN=1.5V 80 Output Voltage, VO - V Efficiency, EFFI - % 3.0 0.9V 1.2V 60 2.8 VIN =1.5 V V 1.2 0.9V 2.6 40 2.4 20 2.2 2.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 [Conditions] *Ta=25C*VDD=VOUT*L=10H *CIN=22F//0.1F*COUT=10F *RFB1 : RFB2=330k : 150k *CFB=22pF 23 5 7 1.0 23 5 7 10 23 5 7 100 23 Output Current, IO - A 1.7 ISB00007 100 VO - IO Output Current, IO - mA 5 71000 ISB00008 EFFI - IO 1.5VOUT 1.6 Output Voltage, VO - V Efficiency, EFFI - % [Conditions] Ta=25C*VDD=2.9V*L=10H *CIN=22F//0.1F*COUT=10F *RFB1 : RFB2=220k : 330k *CFB=39pF VIN =1.5 V 1.2 1.5VOUT 80 VIN=1.5V 0.9V 1.2V 60 1.5 0.9V V 1.4 40 1.3 20 1.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 [Conditions] Ta=25C*VDD=2.9V*L=10H *CIN=22F//0.1F*COUT=10F *RFB1 : RFB2=220k : 330k *CFB=39pF 23 5 7 1.0 23 5 7 10 23 5 7 100 23 Output Current, IO - A 3.0 ISB00009 1.0 VO - Ta Output Current, IO - mA 5 71000 ISB00010 VO - VHLD 2.9VOUT 2.9 Operation Hold Voltage, VHLD - V 0.8 Output Voltage, VO - V [Conditions] *Ta=25C*VDD=VOUT*L=10H *CIN=22F//0.1F*COUT=22F *RFB1 : RFB2=330k : 150k *CFB=22pF 2.8 0.6 2.7 2.6 2.5 -40 [Conditions] *Ta=25C*VIN=12V*VDD=VOUT *L=10H*CIN=22F//0.1F *COUT=22F *RFB1 : RFB2=330k : 150k *CFB=22pF*IOUT=50mA -20 0 20 40 60 80 100 0.4 0.2 0 -40 -20 0 20 40 60 80 100 Ambient Temperature, Ta -C ISB00011 Ambient Temperature, Ta -C ISB00012 No.0001-7/8 SR10000 Series Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.0001-8/8 |
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